Method for producing image pickup apparatus, and method for producing semiconductor apparatus

ABSTRACT

A method for producing an image pickup apparatus includes: a process of fabricating a plurality of image pickup chips by cutting an image pickup chip substrate where light receiving sections and electrode pads are formed; a process of fabricating a joined wafer by bonding the image pickup chips to a glass wafer; a process of filling a gap between the plurality of image pickup chips with a sealing member; a process of machining the joined wafer to reduce a thickness; a process of forming through-hole vias; a process of forming an insulating layer that covers the image pickup chips; a process of forming through-hole interconnections; a process of forming external connection electrodes, each of which is connected to each of the through-hole interconnections; and a process of cutting the joined wafer.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation application of PCT/JP2013/060345filed on Apr. 4, 2013 and claims benefit of Japanese Application No.2012-123225 filed in Japan on May 30, 2012, the entire contents of whichare incorporated herein by this reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method for producing an image pickupapparatus, and a method for producing a semiconductor apparatus,including a process of cutting a joined wafer where a plurality of imagepickup chips (semiconductor chips) are joined to a support substrate.

2. Description of the Related Art

A chip size package (CSP) technology has been used for downsizingsemiconductor apparatuses. In the CSP, in a semiconductor chip where asemiconductor circuit section is formed on a first main face, athrough-hole interconnection is formed up to a second main face, and anexternal connection terminal on the second main face is connected to aninterconnection board.

Here, in a small image pickup apparatus, a transparent support memberthat protects a light receiving section that is the semiconductorcircuit section is joined to a first main face of an image pickup chipon which the light receiving section is formed. A wafer level chip sizepackage (WL-CSP) technology has been used for collectively fabricating aplurality of image pickup apparatuses. In the WL-CSP, an image pickupchip substrate on which a plurality of light receiving sections areformed, and a transparent support substrate are subjected to machiningsuch as formation of through-hole interconnections in a joined waferstate in which the image pickup chip substrate and the transparentsupport substrate are bonded via an adhesive layer. After that, thejoined wafer is individualized into individual image pickup apparatuses.

Note that Japanese Patent Application Laid-Open Publication No.2011-243596 discloses a method for producing a package component by aCSP method in which semiconductor chips mounted on a mounting face of asilicon wafer are sealed by a sealing resin, and the silicon wafer isthen polished or the like from an opposite face to the mounting face,and further individualized into individual package components.

That is, in the above production method, the semiconductor chips are notmachined, but the silicon wafer is machined to become an interposer forthe semiconductor chips.

SUMMARY OF THE INVENTION

A method for producing an image pickup apparatus of an embodiment of thepresent invention includes: a process of fabricating a plurality ofimage pickup chips by cutting an image pickup chip substrate where aplurality of light receiving sections are formed on a first main faceand electrode pads are formed around each of the light receivingsections; a process of fabricating a joined wafer by bonding the firstmain face of each of the image pickup chips to a transparent supportsubstrate via a transparent adhesive layer; a process of filling a gapbetween the plurality of image pickup chips bonded to the joined waferwith a sealing member; a process of machining the joined wafer from asecond main face side to reduce a thickness; a process of forming anetching mask on the second main face; a process of forming through-holevias in the image pickup chips by using the etching mask; a process ofstripping the etching mask; a process of forming an insulating layerthat covers the second main face of the image pickup chips, a surface ofthe sealing member, and a wall face of the through-hole vias; a processof forming through-hole interconnections, each of which is connected toeach of the electrode pads via each of the through-hole vias; a processof forming external connection electrodes, each of which is connected toeach of the through-hole interconnections on the second main face; and aprocess of cutting the joined wafer.

Also, a method for producing a semiconductor apparatus of anotherembodiment includes: a process of fabricating a plurality ofsemiconductor chips by cutting a semiconductor chip substrate where aplurality of semiconductor circuit sections are formed on a first mainface and electrode pads are formed around each of the semiconductorcircuit sections; a process of fabricating a joined wafer by bonding thefirst main face of each of the semiconductor chips to a supportsubstrate via an adhesive layer; a process of filling a gap between theplurality of semiconductor chips bonded to the joined wafer with asealing member; a process of machining the joined wafer from a secondmain face side to reduce a thickness; a process of forming an etchingmask on the second main face; a process of forming through-hole vias inthe semiconductor chips by using the etching mask; a process ofstripping the etching mask; a process of forming an insulating layerthat covers the second main face of the semiconductor chips, a surfaceof the sealing member, and a wall face of the through-hole vias; aprocess of forming through-hole interconnections, each of which isconnected to each of the electrode pads via each of the through-holevias; a process of forming external connection electrodes, each of whichis connected to each of the through-hole interconnections on the secondmain face; and a process of cutting the joined wafer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of an image pickup apparatus of anembodiment;

FIG. 2 is a perspective view for explaining a method for producing theimage pickup apparatus of the embodiment;

FIG. 3A is a flowchart for explaining the method for producing the imagepickup apparatus of the embodiment;

FIG. 3B is a flowchart for explaining the method for producing the imagepickup apparatus of the embodiment;

FIG. 4 is a plan view and a partially enlarged view of a transparentsubstrate of the image pickup apparatus of the embodiment;

FIG. 5 is a perspective view of an image pickup chip of the image pickupapparatus of the embodiment;

FIG. 6A is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 6B is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 6C is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 6D is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 6E is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 6F is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 6G is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 6H is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 6I is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 6J is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 7 is a flowchart for explaining a method for producing an imagepickup apparatus of Modification 1;

FIG. 8 is a sectional view for explaining the method for producing theimage pickup apparatus of Modification 1;

FIG. 9 is a sectional view and a partially enlarged sectional view ofthe image pickup apparatus of Modification 1;

FIG. 10 is a flowchart for explaining a method for producing an imagepickup apparatus of Modification 2;

FIG. 11A is a sectional view for explaining the method for producing theimage pickup apparatus of Modification 2;

FIG. 11B is a sectional view for explaining the method for producing theimage pickup apparatus of Modification 2; and

FIG. 12 is a sectional view and a partially enlarged sectional view ofthe image pickup apparatus of Modification 2.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

<Embodiment>

As shown in FIG. 1, in an image pickup apparatus 10 that is asemiconductor apparatus, an image pickup chip (imager chip) 30, and acover glass 20 that is a support substrate section (transparent flatplate section) are bonded via an adhesive layer 41 made of a transparentresin. A light receiving section 31 that is a semiconductor circuitsection is formed on a first main face 30SA of the image pickup chip 30,and a plurality of electrode pads 32 connected to the light receivingsection 31 by an interconnection (not shown) are further formed aroundthe light receiving section 31 of the first main face 30SA. Theelectrode pad 32 is connected to an external connection electrode 34 andan external connection terminal 35 on a second main face 30SB via athrough-hole interconnection 33. That is, the plurality of electrodepads 32 supply electricity to the light receiving section 31, andtransmit and receive input and output signals to and from the lightreceiving section 31. Moreover, outer peripheral portions of the imagepickup chip 30 and outer peripheral portions of the adhesive layer 41are covered with a sealing member 42 with no gap therebetween.

An insulating layer 43 covers and protects a surface of the sealingmember 42 and the second main face 30SB of the image pickup chip 30 aswell as covering a wall face of a through-hole via to effect insulationbetween silicon as a base material of the image pickup chip 30 and thethrough-hole interconnection 33. Furthermore, a region of the secondmain face 30SB other than an external connection electrode formationregion is covered with a protective layer 44.

That is, in the image pickup apparatus 10, a plan-view dimension of thecover glass 20 is larger than a plan-view dimension of the image pickupchip 30. This is because the image pickup apparatus 10 is fabricated bycutting (individualizing) a joined wafer 40W where a plurality of imagepickup chips 30 are bonded to a glass wafer 20W, which is a transparentsupport substrate that becomes the cover glass 20, away from each otherby a predetermined length via the adhesive layer 41 as shown in FIG. 2.As described below, on the glass wafer 20W, an alignment mark 21 forarranging each of the image pickup chips 30 at a predetermined positionis formed. That is, since the glass wafer 20W is transparent, thealignment mark (first alignment mark) 21 and an alignment mark (secondalignment mark) 36 (see FIG. 5) on the image pickup chip 30 can bealigned with each other from an opposite face to a face where thealignment mark 21 is formed.

Next, a method for producing the image pickup apparatus 10 of theembodiment is described in detail based on flowcharts in FIGS. 3A and3B.

<Step 10> Glass Wafer Fabricating Process

As shown in FIG. 4, the alignment marks 21 for arranging the imagepickup chips 30 at predetermined positions are formed on the glass wafer20W that is the transparent support substrate. Note that an image pickupchip arrangement region 30S is indicated by a broken line for the sakeof description in FIG. 4. The glass wafer 20W that is cut to become thecover glass 20 only needs to be transparent in a wavelength band oflight for image pickup. For example, borosilicate glass, quartz glass,or single crystal sapphire is used.

Note that alignment marks 22 and alignment marks 23 are formed at thesame time as formation of the alignment marks 21. The alignment marks 22are used for dicing at a time of individualization, and the alignmentmarks 23 are used for machining such as formation of the through-holeinterconnection 33 in the image pickup chip 30. The alignment marks 21and the like are formed by, for example, performing patterning byphotolithography after forming a metal layer of Al or the like on anentire face. It is preferable that two alignment marks be provided forone time of positioning processing for the respective alignment marks soas to perform accurate positioning. Note that the alignment marks 21 andthe like may be also formed by partially etching the glass wafer 20W.

Note that a back face of the glass wafer 20W (the opposite face to theface where the alignment marks 21 are formed), which is not machined infollowing processes, may be covered with a photoresist or the like to beprotected.

<Step 11> Image Pickup Chip Fabricating Process

The plurality of light receiving sections 31 that are the semiconductorcircuit sections, the plurality of electrode pads 32 connected to eachof the light receiving sections 31, and the plurality of alignment marks36 are formed on the first main face 30SA of a semiconductor wafer suchas a silicon wafer by a known semiconductor process, so that an imagepickup chip substrate 30W (see FIG. 2) is fabricated. By cutting theimage pickup chip substrate (semiconductor chip substrate) 30W, theplurality of image pickup chips (semiconductor chips) 30 shown in FIG. 5are fabricated.

Sizes of the image pickup chip substrate and the glass wafer 20W areselected according to available production equipment or the likedepending on a form and specifications etc. of the image pickupapparatus to be produced. Also, the image pickup chip substrate and theglass wafer 20W may be set to different sizes. For example, even whenthe image pickup chips are formed from a substrate having a largediameter of 12-inch (300-mm) φ, or from a still larger substrate, theindividualized image pickup chips 30 are re-arrayed (bonded) on theglass wafer 20W of 8-inch (200-mm) φ, and subjected to machining.Accordingly, it becomes possible to produce the image pickup apparatusby equipment for 8-inch (200-mm) φ without using equipment or the likecompatible with a large-diameter wafer. Moreover, a substrate and awafer of different shapes, for example, the image pickup chip substrateof 8-inch (200-mm) φ and the glass wafer 20W of 6-inch (150-mm) squares,may be also used depending on equipment and apparatuses, etc. Asdescribed above, since the image pickup chip substrate and the glasswafer 20W of suitable sizes or shapes for available production equipmentor the like (a production apparatus, a jig and a tool, etc.) can beused, the image pickup apparatus can be produced by effectivelyutilizing existing equipment or the like.

In following processes, only the image pickup chips 30 determined asnon-defective products in an inspection process are used. That is,“defective chips” other than the non-defective products are not used inthe following processes. Thus, even when a yield rate of the imagepickup chips 30 of the image pickup chip substrate 30W is low, adecrease in yield rate of the image pickup chips obtained by re-arrayingand re-machining the image pickup chips is not caused. Note that it ispreferable to perform an inspection for determining defectiveness of theimage pickup chips on the image pickup chips 30 in a state of the imagepickup chip substrate 30W in view of work efficiency although theinspection may be performed on each of the individual image pickup chips30 in an individualized state.

The alignment marks 36 correspond to the alignment marks 21 on the glasswafer 20W. As shown in FIG. 5, the alignment marks 36 are preferablyformed respectively on outer peripheral portions facing each other witha center of the image pickup chip 30 therebetween. By previously formingthe alignment marks on the glass wafer 20W and the image pickup chip 30,the image pickup chip 30 can be automatically placed with high precisionby using a mounting apparatus.

Also, a step portion 37 is formed in the outer peripheral portions ofthe first main face 30SA of the image pickup chip 30. The step portion37 is fabricated by dicing the image pickup chip substrate 30W by stepcutting. The image pickup chip 30 with the step portion 37 can reduce alength L with an adjacent chip so as to prevent spread (a fillet) of anadhesive 41 L to an outer side of the image pickup chip 30 when bondedto the glass wafer 20W. A micro lens group may be also disposed on thelight receiving section 31.

<Step S12> Bonding Process

As shown in FIG. 6A, the plurality of image pickup chips 30 are bondedto the glass wafer 20W away from each other by the predetermined lengthL to fabricate the joined wafer 40W. That is, the plurality of imagepickup chips 30 formed on the image pickup chip substrate 30W onpredetermined array conditions are then re-arrayed on the glass wafer20W after cutting.

The length L needs to be longer than a thickness of a dicing blade usedin a dicing process described below. However, if the length L is toolong, the number of image pickup apparatuses that can be fabricated fromthe single glass wafer 20W is decreased. At the same time, the sealingmember has a larger volume in a sealing member filling process describedbelow, and a curing shrinkage stress becomes larger, so that a crack iseasily generated. Therefore, the length L is preferably 15 μm or moreand 500 μm or less, which is slightly longer than the thickness of thedicing blade.

Also, by setting the length L to a constant value among all of the imagepickup chips 30, workability can be improved, and uniform filling of thesealing member is enabled in the sealing member filling processdescribed below. The crack caused by unevenness of the curing shrinkagestress can be thereby prevented.

For example, the adhesive 41L in a liquid form is first applied in anappropriate amount to five positions of the image pickup chiparrangement region 30S of the glass wafer 20W. The image pickup chiparrangement region 30S can be grasped by the two alignment marks 21arranged on a diagonal line. For example, a dispensing method of pushingout a solution from a distal-end nozzle of a dispenser and applying thesolution is used as an application method.

As the adhesive 41L, a BCB (benzocyclobutene) resin, an epoxy-basedresin, or a silicone-based resin etc., which satisfies such propertiesthat the adhesive has high transparency (for example, a transmittance atvisible wavelengths is 90% or more), has high adhesive strength, and isnot deteriorated by heat or the like in subsequent processes, is used.

The image pickup chip 30 is then bonded to the glass wafer 20W in astate in which the first alignment marks 21 on the glass wafer 20W andthe second alignment marks 36 on the first main face 30SA of the imagepickup chip 30 are aligned with each other by using, for example, a flipchip bonder. The first alignment marks 21 and the second alignment marks36 are set so as to be easily aligned with each other. For example, thefirst alignment mark 21 has a cross shape as shown in FIG. 4, and thesecond alignment mark 36 is composed of four squares as shown in FIG. 5.

Note that a reference mark may be previously formed on the glass wafer20W without forming the alignment marks exclusive for the respectiveimage pickup chips, and the image pickup chips 30 may be arranged at apredetermined pitch based on the reference mark. A throughput can beraised by using the above method. Also, alignment may be performed byusing a pattern of the electrode pads 32 or the like formed on the imagepickup chip 30 instead of the second alignment marks 36.

The liquid adhesive 41L is cured in a state in which the alignment marksare aligned with each other, and becomes the adhesive layer 41. Bycompletely curing the liquid adhesive 41L while pressing the second mainface of the image pickup chip at a predetermined pressure by awafer-shaped pressing jig, parallelism between the main face of theimage pickup chip and the main face of the glass wafer 20W is increased.

As a method for curing the adhesive 41L, any of a thermal curing method,a UV curing method, the UV curing method+the thermal curing method, theUV curing method+a moisture curing method, and a room temperature curingmethod etc. may be employed depending on the resin as long as desiredproperties are satisfied. By using a flip chip bonder including meansfor curing the adhesive 41L, such as a heating section or a UVirradiation section, the arrangement of the image pickup chip 30 at apredetermined position, and the curing of the adhesive 41L can beperformed at the same time.

Note that attention needs to be paid when the adhesive 41L where voidsare easily generated by rapid curing is used although the adhesive 41Lmay be completely cured by the flip chip bonder. In this case, it ispreferable that, for example, when the adhesive 41L is cured by the flipchip bonder, the adhesive 41L be semi-cured to an extent where the imagepickup chip 30 disposed at a predetermined position does not move tocause displacement, and after the plurality of image pickup chips 30 aredisposed on the glass wafer 20W; the adhesive 41L is completely cured ata time and formed into the adhesive layer 41.

<Step S13> Sealing Member Filling Process

As shown in FIG. 6B, a sealing resin 42L in a liquid form that is filledinto a gap between the plurality of image pickup chips 30 disposed onthe glass wafer 20W by, for example, a dispensing method is cured tobecome the sealing member 42. The sealing resin 42L may be also pouredinto the gap instead of the dispensing method.

By setting the arrangement length L between the plurality of imagepickup chips 30 to 15 μm or more and 500 μm or less, the sealing membercan be filled into the gap between the plurality of image pickup chips30 by a capillary tube phenomenon. Note that a region where vertexes ofthe plurality of image pickup chips 30 face each other tends to have asmall height (thickness) when filled with the sealing resin 42L.Therefore, after the sealing resin is cured once, the sealing resin maybe applied again only to the portion where the vertexes of the pluralityof image pickup chips 30 face each other.

The sealing member 42 preferably has a low moisture vapor transmissionrate so as to improve humidity resistance of the image pickup apparatus10, and is difficult to deteriorate by heat or plasma in subsequentprocesses. For example, a BCB resin or polyimide is used. Note that thesealing member 42 may be made of the same material as or a differentmaterial from the adhesive layer 41.

Also, the sealing member 42 preferably has a function as a lightshielding member that prevents entrance of external light into the lightreceiving section. To this end, even when the sealing member 42 is madeof the same resin as the adhesive layer 41, the resin is preferably usedby mixing a light shielding material such as a dye or a black pigmenttherein. Note that a non-conductive material is used when the pigment orthe like is used since the sealing member 42 needs to be an insulator.

A thickness of the sealing member 42, namely, a height to be filled onlyneeds to be larger than a thickness of the image pickup chip 30 afterthinning in step S14. That is, it is not necessary to completely fillthe space between the plurality of image pickup chips 30 with thesealing member 42 before the thinning machining. Conversely, the sealingmember 42 may protrude from the space between the image pickup chips 30.

Note that it is preferable not to perform rapid heating or rapid coolingin the curing of the sealing resin 42L in order to prevent the crackoccurrence due to the shrinkage stress when the sealing resin 42L iscured. Also, it is preferable that the sealing resin 42L be defoamed invacuum before curing, or is cured in vacuum in order to prevent theoccurrence of voids.

Note that the sealing member 42 is not limited to the cured liquidresin. For example, a sheet-like resin member may be cured after fillingthe space between the image pickup chips 30 wile embedding the imagepickup chips 30 by vacuum hot pressing or vacuum laminating.

<Step S14> Image Pickup Chip Machining Process

An image pickup chip machining subroutine is shown in FIG. 3B.

<Step S20> Thickness Reduction Machining Process

As shown in FIG. 6C, the joined wafer 40W is thinned, so that an imagepickup chip bonded face (the second main face 30SB) side is flattened.That is, a back grinding process and a CMP (chemical mechanicalpolishing) process are performed from the second main face 30SB side.

In the back grinding process, a diamond wheel called a back grindingwheel is used. The CMP process is performed for reducing surfaceroughness of a surface grinded in the back grinding process.

Note that when a surface of the joined wafer 40W has largeirregularities after being filled with the sealing member, preprocessingby another means is preferably performed before the back grindingprocess. For example, as the preprocessing, the sealing member 42protruding from the gap between the image pickup chips 30 is shaved by ablade.

Note that dishing, which forms a recess in a center portion of thesurface of the sealing member 42, may occur by the back grinding processand the CMP process. However, since the recessed portion is removed inthe dicing process, there occurs no problem.

The second main face 30SB of the image pickup chip 30 and the surface ofthe sealing member 42 on the joined wafer 40W after thinning form a flatface. Therefore, a similar process to that of a normal semiconductorwafer can be performed on the thinned joined wafer 40W.

That is, as shown in FIG. 6D, a through-hole via 33S for forming thethrough-hole interconnection 33 that is connected to the electrode pad32 formed on the first main face 30SA of the image pickup chip 30 isformed by the normal semiconductor wafer process.

<Step S21> Etching Mask Forming Process

As shown in FIG. 6D, to form the through-hole via, an etching mask 39having an opening in a region immediately above each of the electrodepads 32 is formed on the image pickup chips 30 and the sealing member42. The etching mask 39 also serves as a protective layer for protectingthe image pickup chips 30 and the sealing member 42 from chemicals andplasma used in a subsequent process.

As the etching mask 39, an inorganic film such as a silicon oxide filmor a silicon nitride film, or an organic film such as a photoresist,polyimide, or BCB is used. When the inorganic film is used as theetching mask 39, the inorganic film is formed by using plasma CVD oroptical CVD. Since the film formation methods are performed at lowtemperature, no damage is caused on the semiconductor circuit section(the light receiving section 31) or the like formed on the image pickupchip 30. As a source gas when the silicon oxide film is formed,tetraethoxysilane (TEOS) or octamethylcyclotetrasiloxane (OMCTS) etc. isused. Also, as a source gas when the silicon nitride film is formed, amixture gas such as SiH₄+NH₃, SiH₂CL₂+NH₃, SiH₄+N₂, or SiH₄+NH₃+N₂ isused.

On the other hand, when the organic film is used as the etching mask 39,the organic film is formed by spin coating, spray coating, or screenprinting, etc.

To strip the etching mask 39 in a subsequent process, the etching mask39 made of a different material from the sealing member 42 is used. Forexample, when the sealing member 42 is made of polyimide, for example,the silicon oxide film or the silicon nitride film is used as theetching mask 39. Since the film formation can be performed at lowtemperature as the method for forming the etching mask 39, and no damageis caused on the semiconductor circuit section or the like formed on theimage pickup chip 30, plasma CVD is preferably used.

Note that the alignment marks 23 for forming the through-holeinterconnection, which are previously formed on the glass wafer 20W, areused for alignment of a photo mask used when a patterning mask (notshown) for forming the opening in the etching mask 39 is formed.

When the silicon oxide film, the silicon nitride film, or anon-photosensitive resin is used as the etching mask 39, the mask isetched with a photoresist with an opening pattern to form the opening.In the silicon oxide film or the like, dry etching using afluorine-based gas such as CF₄, CHF₃, or C₂F₆ is performed. On the otherhand, when a photosensitive resin is used, the etching mask 39 with theopening can be formed by photolithography patterning.

<Step S22> Through-hole via Forming Process

The through-hole via 33S is formed using the etching mask 39 by thenormal semiconductor wafer process.

For example, the through-hole via 33S reaching the electrode pad 32 isformed by wet etching using an alkali solution such as KOH or TMAH, ordry etching by an ICP-RIE method or the like.

The through-hole via 33S formed by the wet etching has a tapered shapewhere an opening size in the first main face 30SA is smaller than anopening size in the second main face 30SB. This is because when theimage pickup chip 30 is made of single crystal silicon (100),anisotropic etching is caused in which an etching rate in a <100> planedirection is relatively higher than an etching rate in a <111> planedirection.

Furthermore, in the etching of the through-hole via 33S, side etchingoccurs in which the opening size in the second main face 30SB becomeslarger than an opening size in the etching mask 39. Therefore, theopening size in the etching mask 39 is set to be smaller than a targetopening size in the second main face 30SB. In the through-hole viaforming process, the etching mask 39 protects the sealing member 42 fromthe alkali solution.

Note that the through-hole via 33S may be also formed by the dry etchingsuch as ICP-RIE, or a physical machining method such as laser machining

<Step S23> Etching Mask Stripping Process

The etching mask 39 is stripped. As a stripping method, a removingmethod with high etch selectivity between the etching mask 39 and thesealing member 42 is selected. For example, when the sealing member 42is made of polyimide and the etching mask 39 is the silicon oxide film,a wet stripping method using a fluorine-based solution such as BHF isused.

<Step S24> Insulating Layer Forming Process

As shown in FIG. 6E, the insulating layer 43 is formed in which anopening is patterned in a bottom face of the through-hole via 33S suchthat the electrode pad 32 is exposed with the second main face 30SB ofthe image pickup chip 30, and the surface of the sealing member 42, anda wall face of the through-hole via 33S covered. An insulating materialsimilar to that of the etching mask 39 is used for the insulating layer43. As a method for forming the insulating layer and a method forpatterning the opening, a formation method similar to or different fromthat of the etching mask 39 may be employed.

Since the insulating layer 43 is not stripped in following processes,the insulating layer 43 protects the sealing member 42 in the followingprocesses. For example, the insulating layer 43 protects the sealingmember 42 from chemical treatment or plasma treatment during patterningin a through-hole interconnection forming process in step S25.

<Step S25> Through-hole Interconnection Forming Process

As shown in FIG. 6F, after the insulating layer 43 is formed on the wallface of the through-hole via 33S or the like, the through-holeinterconnection 33 composed of a conductor is formed in an inner portionof the through-hole via 33S. The through-hole interconnection 33 isformed by patterning after forming a conductive film of aluminum orcopper etc. using a sputtering method or a deposition method. Note thata plating process may be used in the through-hole interconnectionforming process.

<Step S26> External Connection Electrode Forming Process

After the through-hole interconnection is formed, the externalconnection electrode 34 connected to the through-hole interconnection 33is formed on the second main face 30SB of the image pickup chip 30. Notethat the external connection electrode 34 may be also formed at the sametime as the formation of the through-hole interconnection.

<Step S27> Protective Layer Forming Process

As shown in FIG. 6G, the protective layer 44 having an opening where aportion of the external connection electrode 34 is exposed is formed.The protective layer 44 may be formed of a material and by a formationmethod similar to those of the etching mask 39 or the like, or of adifferent material and by a different formation method therefrom.

<Step S28> External Connection Terminal Forming Process

The projecting external connection terminal 35 for effecting electricalconnection with outside is disposed in the opening of the protectivelayer 44 on the external connection electrode 34. Note that a platingprocess may be used in the through-hole interconnection forming processor the like, and a solder ball etc. may be used for the externalconnection terminal 35.

<Step S15> Individualizing Process (Dicing Process)

A plurality of image pickup apparatuses 10 are fabricated from thesingle joined wafer 40W by an individualizing process of cutting thejoined wafer 40W.

For cutting, a two-stage dicing method shown in FIGS. 61 and 6J ispreferable. That is, after the joined wafer 40W is half-cut to about 10to 200 μm from a surface of the glass wafer 20W (an upper side in thedrawings), the glass wafer 20W is subjected to full-cut dicing, so thata crack occurrence due to a stress and stripping of the sealing member42 can be prevented. Moreover, in the two-stage dicing method, a bladetype (a bond material, an abrasive grain diameter, a degree ofconcentration) and machining conditions (a feed speed, a rotation speed)suitable for resin are used for dicing the sealing member 42, and ablade type and machining conditions suitable for glass are used fordicing the glass wafer 20W. A machining quality (resin burrs, chippingof glass, and delamination of a resin layer) can be thereby improved.Also, step cutting by which a step is formed in end portions of theindividualized image pickup chips 30 may be performed by setting theblade for resin to a larger thickness than the blade for glass.

Also, the glass wafer 20W may be subjected to full-cut dicing by bladedicing for glass or laser dicing, and thereby individualized afterremoving the sealing member 42 on a dicing line by laser dicing oretching.

In alignment of dicing, the alignment marks 22 firstly formed on theglass wafer 20W are used. Note that, instead of the alignment marks 22,an alignment mark for dicing may be formed on the second main face 30SBof the image pickup chip 30 or on the sealing resin between the imagepickup chips 30 in the through-hole interconnection forming process orthe like.

In the production method of the embodiment, even when the image pickupchip substrate 30W has a low yield rate of image pickup devices, thejoined wafer 40W is fabricated by using only the non-defective imagepickup chips 30. Therefore, the defective chip is not produced into theimage pickup apparatus, so that the image pickup apparatus 10 can beproduced at low cost, and productivity is high.

Also, in the production method of the embodiment, the image pickupapparatus can be produced by using the joined wafer 40W with apredetermined diameter regardless of the diameter of the image pickupchip substrate 30W. Since machining equipment compatible with a largediameter is unrequired, productivity is high.

Moreover, since the image pickup chip with a large thickness beforebeing machined is bonded to the glass wafer 20W, the image pickup chipis easily handled. That is, the image pickup chip that is thinned forforming the through-hole interconnection is easily damaged, and easilydeformed by a stress during bonding or the like. However, in theproduction method of the embodiment, the image pickup chip in a thickstate can be bonded to the glass wafer 20W.

Also, since the support substrate is the transparent glass wafer 20W,alignment using the alignment marks can be performed from the oppositeface to the image pickup chip bonded face as shown in FIG. 2.

Furthermore, when the joined wafer 40W is machined from the second mainface 30SB side by the wafer process, the sealing member 42 is coveredwith and protected by the etching mask 39 or the insulating layer 43.Therefore, the sealing member 42 is not deteriorated, so that thehighly-reliable image pickup apparatus can be produced by the productionmethod of the image pickup apparatus of the embodiment.

Also, since the chip arrangement length is set to a constant value, itis easy to fill the sealing resin 42L, thereby preventing the crack inthe sealing resin 42L. Thus, a production yield rate is high.

Moreover, the image pickup chip 30 and the sealing member 42 can betreated as a single wafer by making the outer face of the image pickupchip 30 and the outer face of the sealing member 42 flush with eachother by the CMP. Thus, the semiconductor wafer process can be performedon a chip-shaped component, and high-precision and high-densitymachining can be performed.

The image pickup apparatus 10 includes the image pickup chip 30 that isthe semiconductor chip where the light receiving section 31 that is thesemiconductor circuit section is formed on the first main face 30SA, thecover glass 20 that is the support substrate section having a largerplan-view dimension than the image pickup chip 30, the transparentadhesive layer 41 that bonds the first main face 30SA of the imagepickup chip 30 and the image pickup chip 30, and the sealing member 42that covers a side face of the image pickup chip 30 and a side face ofthe adhesive layer 41, and is made of an insulating material having asame outer dimension as the cover glass 20.

That is, the side face of the image pickup chip 30 is covered with thesealing member 42, and the image pickup chip 30 is not exposed outside.Therefore, the image pickup apparatus 10 has excellent electricalinsulating properties and humidity resistance.

Note that a functional member may be further added to the image pickupapparatus 10 of the above embodiment. For example, an objective lensunit may be joined to the opposite face to the face of the glass wafer20W where the image pickup chip 30 is bonded in alignment with the imagepickup chip 30. Also, a digital signal processor (DSP) chip forprocessing an image pickup signal may be joined to the second main face30SB of the image pickup chip 30.

A backside irradiation-type image pickup apparatus may be also producedthrough processes of bonding an interconnection layer side of the imagepickup chip 30 to the support substrate, filling the sealing resin intothe gap between the image pickup chips 30, thinning the image pickupchip 30 to about 3 μm to expose the light receiving section 31,thereafter forming a color filter and a micro lens on the lightreceiving section 31, and removing a silicon layer on the electrode toexpose the electrode.

Also, the semiconductor chip is not limited to the image pickup chip,and any type, such as general semiconductor chips, various sensors oractuators, may be employed. The semiconductor apparatus to be producedis also not limited to the image pickup apparatus.

Since the image pickup apparatus of the above embodiment andmodifications has high reliability while being ultra-small, the imagepickup apparatus can be preferably used particularly as an image pickupapparatus disposed at a distal end portion of an electronic endoscope.

<Modification>

Next, methods for producing image pickup apparatuses 10A and 10B ofModifications 1 and 2 of the embodiment of the present invention aredescribed. Since the methods for producing the image pickup apparatuses10A and 10B are similar to the method for producing the image pickupapparatus 10 and have the same effects, same constituent elements areassigned same reference numerals, and description thereof is omitted.

As shown in a flowchart in FIG. 7, in the method for producing the imagepickup apparatus 10A of Modification 1, a cover layer 45 is formed infirst step S21P of the wafer process.

As shown in FIG. 8, the cover layer 45 is formed so as to cover thesurface of the sealing member 42 that is exposed on the second main face30SB in the thickness reduction machining process in step S20. Since thecover layer 45 is not stripped in the following processes, the coverlayer 45 keeps protecting the sealing member 42 as shown in FIG. 9.

Since the etching mask 39 is stripped in a subsequent: process, thecover layer 45 made of a different material from the etching mask 39 isused. Also, the cover layer 45 may be formed of a material and by aformation method similar to those of the insulating layer 43 and theprotective layer 44; or of a different material and by a differentformation method therefrom.

The method for producing the image pickup apparatus 10A of Modification1 has the effects of the method for producing the image pickup apparatus10, and can further surely protect the sealing member 42.

As shown in a flowchart in FIG. 10, an etching mask stripping processS23B is characteristic in the method for producing the image pickupapparatus 10B of Modification 2.

In the etching mask stripping process in step S23 of the embodiment, theentire etching mask 39 is stripped. On the contrary, in the etching maskstripping process S23B, an etching mask 39B in a region covering thesealing member 42 is not stripped as shown in FIG. 11A.

As shown in FIG. 11B, in the insulating layer forming process S24, theinsulating layer 43 that covers the second main face 30SB of the imagepickup chip 30, a surface of the etching mask 39B covering the sealingmember 42, and the wall face of the through-hole via 33S is formed. Asshown in FIG. 12, the cover layer 45, the etching mask 39B, and theinsulating layer 43 are not stripped in the following processes.Therefore, the sealing member 42 is protected by not only the coverlayer 45 and the insulating layer 43, but also the etching mask 39B.

The method for producing the image pickup apparatus 10B of Modification2 has the effects of the method for producing the image pickup apparatus10 or the like, and can further more surely protect the sealing member42.

That is, the present invention is not limited to the aforementionedembodiment or the like, and various changes, modifications, combinationsetc. can be made therein without departing from the scope of the presentinvention.

What is claimed is:
 1. A method for producing an image pickup apparatuscomprising: a process of fabricating a plurality of image pickup chipsby cutting an image pickup chip substrate where a plurality of lightreceiving sections are formed on a first main face and electrode padsare formed around each of the light receiving sections; a process offabricating a joined wafer by bonding the first main face of each of theimage pickup chips to a transparent support substrate via a transparentadhesive layer; a process of filling a gap between the plurality ofimage pickup chips bonded to the joined wafer with a sealing member; aprocess of machining the joined wafer from a second main face side toreduce a thickness; a process of forming an etching mask on the secondmain face; a process of forming through-hole vias in the image pickupchips by using the etching mask; a process of stripping the etchingmask; a process of forming an insulating layer that covers the secondmain face of the image pickup chips, a surface of the sealing member,and a wall face of the through-hole vias; a process of formingthrough-hole interconnections, each of which is connected to each of theelectrode pads via each of the through-hole vias; a process of formingexternal connection electrodes, each of which is connected to each ofthe through-hole interconnections on the second main face; and a processof cutting the joined wafer.
 2. The method for producing an image pickupapparatus according to claim 1, wherein image pickup chips determined asnon-defective products by an inspection are bonded to the supportsubstrate.
 3. The method for producing an image pickup apparatusaccording to claim 2, wherein the image pickup chips are bonded to thesupport substrate in a state in which a first alignment mark formed onthe support substrate and a second alignment mark formed on the firstmain face of the image pickup chips are aligned with each other.
 4. Amethod for producing a semiconductor apparatus comprising: a process offabricating a plurality of semiconductor chips by cutting asemiconductor chip substrate where a plurality of semiconductor circuitsections are formed on a first main face and electrode pads are formedaround each of the semiconductor circuit sections; a process offabricating a joined wafer by bonding the first main face of each of thesemiconductor chips to a support substrate via an adhesive layer; aprocess of filling a gap between the plurality of semiconductor chipsbonded to the joined wafer with a sealing member; a process of machiningthe joined wafer from a second main face side to reduce a thickness; aprocess of forming an etching mask on the second main face; a process offorming through-hole vias in the semiconductor chips by using theetching mask; a process of stripping the etching mask; a process offorming an insulating layer that covers the second main face of thesemiconductor chips, a surface of the sealing member, and a wall face ofthe through-hole vias; a process of forming through-holeinterconnections, each of which is connected to each of the electrodepads via each of the through-hole vias; a process of forming externalconnection electrodes, each of which is connected to each of thethrough-hole interconnections on the second main face; and a process ofcutting the joined wafer.
 5. The method for producing a semiconductorapparatus according to claim 4, wherein the semiconductor chipsdetermined as non-defective products by an inspection are bonded to thesupport substrate.
 6. The method for producing a semiconductor apparatusaccording to claim 5, including a process of forming a cover layer thatcovers the sealing member exposed on the second main face before theprocess of forming the etching mask.
 7. The method for producing asemiconductor apparatus according to claim 6, wherein in the process ofstripping the etching mask, the etching mask in a region covering thesealing member is not stripped.
 8. The method for producing asemiconductor apparatus according to claim 7, wherein the supportsubstrate and the adhesive layer are transparent.